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Juan Carlos López
Senior WriterAn engineer by training. A science and tech journalist by passion, vocation, and conviction. I've been writing professionally for over two decades, and I suspect I still have a long way to go. At Xataka, I write about many topics, but I mainly enjoy covering nuclear fusion, quantum physics, quantum computers, microprocessors, and TVs.
Alba Mora
WriterAn established tech journalist, I entered the world of consumer tech by chance in 2018. In my writing and translating career, I've also covered a diverse range of topics, including entertainment, travel, science, and the economy.
Intel’s near-term competitiveness relies heavily on the success of a single semiconductor manufacturing technology: the 18A node. Ben Sell, the company’s VP of technology development, confirmed in September that the 18A process is ready for full-scale production, set to begin in 2025. He also said that it’ll benefit from resources reallocated from the 20A node.
Intel’s primary strategy for competing with TSMC and Samsung in the integrated circuit production market is the 18A manufacturing technology, especially given that the 2 nm process is set to emerge soon.
The 18A node is built on two crucial innovations: RibbonFET Gate-All-Around transistors and PowerVia power delivery technology. While Intel had previously announced these advancements, the company’s recent roadmap update has provided more clarity.
The 18A-PT and 14A Nodes Will Shape Intel’s Future Through 2028
The 14A node will be the first to use ASML’s high-NA EUV system. According to Intel’s roadmap, this technology is expected to be ready by 2027. Shortly after, the company will make the 14A-E node available. The 14A-E process is essentially a revision of the original 14A integration technology.
Notably, when Intel refers to its 18A or 14A nodes, it says that these integration technologies are comparable to TSMC’s and Samsung’s 1.8 nm and 1.4 nm lithographies, respectively.
The 18A-PT node will be compatible with Foveros Direct 3D advanced packaging technology.
Among the significant innovations in Intel’s new roadmap are the 18A-P (a high-performance revision of the 18A node) and 18A-PT processes. The 18A-P node is expected to arrive in 2026 and is currently undergoing tests with plans for full-scale production next year.
Meanwhile, the 18A-PT node won’t be ready until 2028. Importantly, it’ll be compatible with the advanced Foveros Direct 3D packaging technology. This compatibility comes from a hybrid interconnect system that allows chips to be stacked vertically.
This packaging technique is crucial for Intel. It enables the company to compete with TSMC’s COWOS and Samsung’s I-Cube, H-Cube, and X-Cube advanced packaging technologies. The key difference among these implementations lies in how integrated circuits are distributed or stacked on the substrate, a choice that significantly impacts interconnect performance.
Intel’s current roadmap extends beyond the 14A node. Keyvan Esfarjani, one of the top managers at the company’s integrated circuit manufacturing subsidiary, confirmed in February 2024 that its 10A node will begin production in late 2027. The node is expected to be equivalent to the 1 nm process of Intel’s competitors.
This timeline aligns with Intel’s plans to start large-scale manufacturing of the 14A node. However, mass production of 1 nm semiconductors will likely occur later on, possibly well into 2028.
Images | ASML | Intel
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